SI-GE FILMS BY MOLECULAR-BEAM EPITAXY - GROWTH, PROPERTIES AND APPLICATIONS

被引：0
|
作者：
IYER, SS [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF METALS | 1988年 / 40卷 / 07期
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D O I：
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中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
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页码：A36 / A36
页数：1
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