HIGH-FREQUENCY CIRCUIT CHARACTERIZATION USING THE AFM AS A REACTIVE NEAR-FIELD PROBE

The use of direct capacitively coupled probes for performing the non-invasive measurement of integrated circuits operating at high frequencies is examined. The designed probes are fabricated by metalization of standard Si3N4 scanning force microscope pyramidal tipped cantilevers so they measure the potential at a localized region of the circuit under test. Both topographical and electrical characterization can be performed with the same probe using this method. A numerical model is developed for determining the probe/test circuit coupling which allows the simulation of arbitrary probe and test circuit geometries including passivation effects. Experimental testing of the probe resolution is performed on a microstrip interconnect line.