Carbon films with diamond-like properties were deposited onto silicon by r.f. plasma decomposition of methane. Three series of films deposited in a range of substrate biases, onto unrefrigerated, refrigerated or heated substrates, have been analysed by secondary ion mass spectrometry. The sputter rate, the Si-C transition width and the C2:C3 signal ratio vary with the substrate bias and present a critical point at about 450 V.
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UNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCEUNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCE
VIVENSANG, C
TURBAN, G
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UNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCEUNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCE
TURBAN, G
ANGER, E
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UNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCEUNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCE
ANGER, E
GICQUEL, A
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UNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCEUNIV PARIS 13,CNRS,INGN MAT & HAUTES PRESS LAB,F-93430 VILLETANEUSE,FRANCE