THEORETICAL-ANALYSIS OF ELECTRONIC-STRUCTURES OF SHORT-PERIOD SUPERLATTICES (GAAS)M/(ALAS)N AND CORRESPONDING ALLOYS ALN/(M + N)GAM/(M + N)AS

被引:27
|
作者
XIA, JB [1 ]
机构
[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 12期
关键词
D O I
10.1103/PhysRevB.38.8358
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8358 / 8364
页数:7
相关论文
共 50 条
  • [1] BAND-EDGE STATES IN SHORT-PERIOD (GAAS)M/(ALAS)N SUPERLATTICES
    GOPALAN, S
    CHRISTENSEN, NE
    CARDONA, M
    PHYSICAL REVIEW B, 1989, 39 (08): : 5165 - 5174
  • [2] Electron-phonon interaction in short-period (GaAs) m (AlAs) n (001) superlattices
    Grinyaev, S. N.
    Nikitina, L. N.
    Tyuterev, V. G.
    SEMICONDUCTORS, 2014, 48 (03) : 320 - 331
  • [3] Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices
    S. N. Grinyaev
    L. N. Nikitina
    V. G. Tyuterev
    Semiconductors, 2014, 48 : 320 - 331
  • [4] Phonon modes of short-period (GaAs)n/(AlAs)n superlattices
    Yang, TR
    Dvoynenko, MM
    Goncharenko, AV
    PHYSICS LETTERS A, 2002, 293 (5-6) : 272 - 276
  • [5] Multiband coupling and electronic structure of short-period (GaAs)N/(AlAs)N(001) superlattices
    Glinskii, GF
    Lakisov, VA
    Dolmatov, AG
    Kravchenko, KO
    NANOTECHNOLOGY, 2000, 11 (04) : 233 - 236
  • [6] POSITION AND CHARACTER (GAMMA OR X) OF ENERGY-STATES IN SHORT-PERIOD (GAAS)M(ALAS)N SUPERLATTICES
    NAGLE, J
    GARRIGA, M
    STOLZ, W
    ISU, T
    PLOOG, K
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 495 - 498
  • [7] X-ray standing-wave study of (AlAs)m(GaAs)n short-period superlattices
    Lessmann, A
    Brennan, S
    Munkholm, A
    Schuster, M
    Riechert, H
    Materlik, G
    PHYSICAL REVIEW B, 1999, 59 (16) : 10801 - 10810
  • [8] Energy states in short-period symmetrical and asymmetrical (GaAs)N/(AlAs)M superlattices:: The effect of the boundary conditions
    Glukhov, KE
    Bercha, AI
    Korbutyak, DV
    Litovchenko, VG
    SEMICONDUCTORS, 2004, 38 (04) : 410 - 418
  • [9] Energy states in short-period symmetrical and asymmetrical (GaAs)N/(AlAs)M superlattices: The effect of the boundary conditions
    K. E. Glukhov
    A. I. Bercha
    D. V. Korbutyak
    V. G. Litovchenko
    Semiconductors, 2004, 38 : 410 - 418
  • [10] ELECTRONIC-STRUCTURES AND OPTICAL-PROPERTIES OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES
    XIA, JB
    CHANG, YC
    PHYSICAL REVIEW B, 1990, 42 (03): : 1781 - 1790