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- [1] PHOTO-LUMINESCENCE OF GAAS1-XSBX(0 LESS-THAN X LESS-THAN 0.01)SOLID SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1076 - 1078
- [2] PHOTO-LUMINESCENCE OF GAAS1-XSBX AND GA1-XINXAS (X-LESS-THAN-0.01) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 68 - 72
- [3] RADIATIVE RECOMBINATION IN UNDOPED GAAS1-XSBX (0 LESS-THAN X LESS-THAN 0.3) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 727 - 728
- [4] COMPOSITION AND TEMPERATURE DEPENDENCES OF THE QUANTUM EFFICIENCY OF THE PHOTOLUMINESCENCE EMITTED BY GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 780 - 783
- [5] QUANTUM EFFICIENCY OF THE LUMINESCENCE EMITTED FROM CDXHG1-XTE (0.4-LESS-THAN-X-LESS-THAN-0.74) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (06): : 667 - 668
- [6] TEMPERATURE-DEPENDENCE OF THE BAND-GAP OF UNDOPED GAAS1-XSBX (X-LESS-THAN-OR-EQUAL-TO 0.05) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1334 - 1336
- [7] LUMINESCENCE OF GAXIN1-XP SOLID-SOLUTIONS WITH 0.45 LESS THAN X LESSLESS THAN 0.50 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (12): : 1534 - 1537
- [8] PHOTO-LUMINESCENCE SPECTRA OF (ZNSE)1-X(GAAS)X SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (07): : 831 - 832