DIAMOND THIN-FILM RECESSED GATE FIELD-EFFECT TRANSISTORS FABRICATED BY ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING

被引：39
|
作者：
GROT, SA
GILDENBLAT, GS
BADZIAN, AR
机构：
[1] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802
[2] PENN STATE UNIV,MAT RES LAB,UNIV PK,PA 16802
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/55.192795
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350-degrees-C. The upper temperature range is limited by the gate leakage current The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 X 10(13) cm-3 and 280 cm2 / V . s, respectively. The maximum transconductance was 87-mu-S / mm at 200-degrees-C.
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页码：462 / 464
页数：3
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