GROWTH AND CHARACTERIZATION OF ELECTRODEPOSITED FILMS OF CADMIUM TELLURIDE ON SILICON

被引：9

作者：

FISHER, JM

BERLOUIS, LEA

SAWERS, LJM

MACDONALD, SM

AFFROSSMAN, S

DISKETT, DJ

ASTLES, MG

机构：

[1] UNIV STRATHCLYDE,DEPT PURE & APPL CHEM,GLASGOW G1 1XL,SCOTLAND

[2] DEF RES AGCY,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

[3] ROYAL MIL COLL SCI,APPL PHYS & ELECTROOPT GRP,SWINDON SN6 8LA,WILTS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90785-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This work describes the growth and characterization of electrodeposited films of the II-VI semiconductor CdTe directly on to p- and n-type silicon. In-situ ellipsometry has revealed the presence of a spontaneously deposited Te layer on illuminated p-type Si and on n-type Si. The growth of the spontaneous layer has been verified by the other techniques used to characterize the electrodeposited films, such as differential scanning calorimetry, X-ray photo-electron spectroscopy, energy dispersive analysis by X-rays, Rutherford backscattering and X-ray diffraction. The subsequent growth of the CdTe layer on top of this is close to stoichiometric composition but the film does not appear to form a coherent layer.

引用

页码：86 / 93

页数：8

共 50 条

[1] CATHODICALLY ELECTRODEPOSITED FILMS OF CADMIUM TELLURIDE
LYONS, LE
MORRIS, GC
HORTON, DH
KEYES, JG
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 168 (1-2): : 101 - 116
[2] IN-SITU ELLIPSOMETRY STUDIES OF ELECTRODEPOSITED CADMIUM TELLURIDE FILMS ON CADMIUM MERCURY TELLURIDE
FISHER, JM
BERLOUIS, LEA
ROSPENDOWSKI, BN
HALL, PJ
ASTLES, MG
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1459 - 1464
[3] CHARACTERIZATION OF [111] CADMIUM TELLURIDE ELECTRODEPOSITED ON CADMIUM-SULFIDE
KAMPMANN, A
COWACHE, P
MOKILI, B
LINCOT, D
VEDEL, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 256 - 261
[4] ORIGIN AND IDENTIFICATION OF IMPURITIES IN ELECTRODEPOSITED CADMIUM TELLURIDE FILMS
LYONS, LE
MORRIS, GC
TANDON, RK
[J]. SOLAR ENERGY MATERIALS, 1989, 18 (05): : 315 - 331
[5] Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer
Antipov, V. V.
Kukushkin, S. A.
Osipov, A. V.
[J]. PHYSICS OF THE SOLID STATE, 2017, 59 (02) : 399 - 402
[6] Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer
V. V. Antipov
S. A. Kukushkin
A. V. Osipov
[J]. Physics of the Solid State, 2017, 59 : 399 - 402
[7] Growth and characterization of vacuum deposited cadmium telluride thin films
Shreekanthan, KN
Kasturi, VB
Shivakumar, GK
[J]. INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2003, 10 (05) : 433 - 436
[8] Morphological studies on electrodeposited mercury cadmium telluride thin films
Kumaresan, R
Babu, SM
Ramasamy, P
[J]. MATERIALS CHEMISTRY AND PHYSICS, 1999, 59 (02) : 107 - 113
[9] The effects of CTAB concentration on the properties of electrodeposited cadmium telluride films
Li, Qian
Fu, Wuyou
Mu, Yannan
Zhang, Wenjiao
Lv, Pin
Zhou, Liying
Yang, Haibin
Chi, Kailin
Yang, Lihua
[J]. CRYSTENGCOMM, 2014, 16 (24): : 5227 - 5233
[10] Investigation of cadmium telluride films on silicon substrate
Odarych, V. A.
Sarsembaeva, A. Z.
Sizov, F. F.
Vuichyk, M. V.
[J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2005, 8 (04) : 55 - 59

← 1 2 3 4 5 →