EFFECT OF HEAVY DOPING ON BAND STRUCTURE OF GERMANIUM AND SILICON

被引：0
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作者：
VOLFSON, AA
SUBASHIE.VK
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：876 / &
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