SPIN-COATABLE INORGANIC RESISTS BASED ON NOVEL PEROXOPOLYNIOBOTUNGSTIC ACIDS FOR BILAYER LITHOGRAPHY

被引:36
|
作者
KUDO, T
ISHIKAWA, A
OKAMOTO, H
MIYAUCHI, K
MURAI, F
MOCHIJI, K
UMEZAKI, H
机构
关键词
D O I
10.1149/1.2100252
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2607 / 2613
页数:7
相关论文
共 18 条
  • [1] Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists
    Saifullah, MSM
    Kurihara, K
    Humphreys, CJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 2737 - 2744
  • [2] Spin-coatable Al2O3 resists in electron beam nanolithography
    Saifullah, MSM
    Namatsu, H
    Yamaguchi, T
    Yamazaki, K
    Kurihara, K
    [J]. MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 633 - 642
  • [3] Spin-coatable inorganic gate dielectric for organic thin-film transistors
    Han, K
    Park, SY
    Kim, MJ
    Lee, HH
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
  • [4] Sub-10 nm electron beam nanolithography using spin-coatable TiO2 resists
    Saifullah, MSM
    Subramanian, KRV
    Tapley, E
    Kang, DJ
    Welland, ME
    Butler, M
    [J]. NANO LETTERS, 2003, 3 (11) : 1587 - 1591
  • [5] Nanolithography made from water-based spin-coatable LSMO resist
    Chuang, Chih-Min
    Wu, Ming-Chung
    Huang, Yu-Ching
    Cheng, Kuo-Chung
    Lin, Ching-Fu
    Chen, Yang-Fang
    Su, Wei-Fang
    [J]. NANOTECHNOLOGY, 2006, 17 (17) : 4399 - 4404
  • [6] Novel patterning of gold using spin-coatable gold electron-beam resist
    Kim, Ki-Chul
    Lee, Im-Bok
    Kang, Dae-Joon
    Maeng, Sunglyul
    [J]. ETRI JOURNAL, 2007, 29 (06) : 814 - 816
  • [7] Investigation of novel inorganic resists materials for EUV lithography
    Krysak, Marie E.
    Blackwell, James M.
    Putna, Steve E.
    Leeson, Michael J.
    Younkin, Todd R.
    Harlson, Shane
    Frasure, Kent
    Gstrein, Florian
    [J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V, 2014, 9048
  • [8] PREPARATION AND EXPOSURE CHARACTERISTICS OF NOVEL INORGANIC RESISTS BASED ON POLY TANTALOTUNGSTIC ACIDS
    ISHIKAWA, A
    OKAMOTO, H
    MIYAUCHI, K
    KUDO, T
    [J]. DENKI KAGAKU, 1988, 56 (07): : 538 - 542
  • [9] Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography
    Ganesan, R
    Choi, JH
    Yun, HJ
    Kwon, YG
    Kim, KS
    Oh, TH
    Kim, JB
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXII, PT 1 AND 2, 2005, 5753 : 671 - 678
  • [10] Optics-free, plasma-based lithography in inorganic resists made up of nanoparticles
    Shaw, Santosh
    Miller, Kyle J.
    Colaux, Julien L.
    Cademartiri, Ludovico
    [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (03):