LOW-TEMPERATURE ION-BEAM MIXING OF CO/SI SYSTEMS

被引：1
|
作者：
VANTOMME, A
LANGOUCHE, G
机构：
[1] Instituut voor Kern- en Stralingsfysika, Katholieke Universiteit Leuven, Leuven, B-3001
来源：
HYPERFINE INTERACTIONS | 1992年 / 70卷 / 1-4期
关键词：
D O I：
10.1007/BF02397476
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
CO/Si systems were ion beam mixed at 77 K using a 100 keV Ar beam. The formation of different phases as a function of irradiation dose has been studied, using Mossbauer spectroscopy (MS) and Rutherford backscattering spectroscopy (RBS). It was found that Co2Si, CoSi and CoSi2 are formed subsequently in parallel layers. After high dose irradiation , a phase with stoichiometry Co:Si equal to 1:3 was observed, suggesting CoSi3 has been formed. However, MS gave clear evidence that this phase consists of precipitates Of CoSi2 and Si. Finally, we found that the amount of mixing scales linearly with the square root of the fluence, with a mixing rate of 1.0 x 10(4) angstrom 4.
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页码：913 / 916
页数：4
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