RATE OF THE FORMATION OF SIO AND SIC - THE REDUCTION OF SIO2 BY SOLID CARBON

被引：0
|
作者：
KAWAUCHI, K
MAEDA, M
KANEKO, M
SASABE, M
机构：
[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
[2] CHIBA INST TECHNOL,NARASHINO,CHIBA 275,JAPAN
来源：
TRANSACTIONS OF THE IRON AND STEEL INSTITUTE OF JAPAN | 1987年 / 27卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
收藏
页码：B71 / B71
页数：1
相关论文
共 50 条
  • [1] RATE OF THE FORMATION OF SIO AND SIC - REDUCTION OF SIO2 BY SOLID CARBON
    KAWAUCHI, K
    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN, 1986, 72 (12): : S900 - S900
  • [2] REDUCTION OF SiO2 BY SOLID CARBON. (RATE OF THE FORMATION OF SiO AND SiC).
    Kawauchi, Kazuteru
    Maeda, Masafumi
    Kaneko, Masao
    Sasabe, Minoru
    Transactions of the Iron and Steel Institute of Japan, 1986, 27 (03)
  • [3] The role of carbon and SiO2 in solid-state sintering of SiC
    Gross, Eran
    Dahan, Dana Benes
    Kaplan, Wayne D.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2015, 35 (07) : 2001 - 2005
  • [4] REDUCTION RATE OF SIO2 IN SLAG BY CARBON-SATURATED IRON
    SUN, HP
    MORI, K
    PEHLKE, RD
    METALLURGICAL TRANSACTIONS B-PROCESS METALLURGY, 1993, 24 (01): : 113 - 120
  • [5] Reduction of SiO2 to SiC Using Natural Gas
    Ksiazek, Michal
    Tangstad, Merete
    Dalaker, Halvor
    Ringdalen, Eli
    METALLURGICAL AND MATERIALS TRANSACTIONS E-MATERIALS FOR ENERGY SYSTEMS, 2014, 1 (03): : 272 - 279
  • [6] Synthesis of multilayered composite nanotube heterostructure; SiC–SiO2, C–SiO2, and C–SiC–SiO2 nanotubes
    T. Taguchi
    S. Shamoto
    Journal of Materials Science, 2012, 47 : 4363 - 4369
  • [7] Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface
    Kobayashi, Takuma
    Matsushita, Yu-ichiro
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (14)
  • [8] Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface
    Onneby, C
    Pantano, CG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1597 - 1602
  • [9] Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface
    Onneby, C.
    Pantano, C.G.
    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1997, 15 (03): : 1597 - 1602
  • [10] Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface
    J Vac Sci Technol A, 3 Pt 1 (1597):
12345