THE INFLUENCE OF CRYSTAL THICKNESS ON SCATTERING AND RADIATION OF HIGH-ENERGY ELECTRONS IN ORIENTED CRYSTALS

被引：11
|
作者：
ANTIPENKO, AP
BOCHEK, GL
BLAZHEVICH, SV
KULIBABA, VI
MASLOV, NI
TRUTEN, VI
SHRAMENKO, BI
SHULGA, NF
机构：
[1] Institute of Physics and Technology, Academy of Sciences of the Ukrainian SSSR
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 48卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(90)90125-E
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper reports experimental data on the structure of angular distributions as a function of silicon crystal thickness and the ratio of rms scattering angles of 〈111〉-axis-oriented and random silicon crystals. Relative energy losses due to gamma radiation, for small solid angles of forward radiation, are also presented. The measurements were performed for thicknesses ranging from 0.01 to 70 mm. It is found that the greatest radiation losses of relativistic electrons in oriented silicon crystals occur at crystal thicknesses around 15 mm. © 1990.
引用
收藏
页码：291 / 295
页数：5
相关论文
共 50 条
  • [1] RADIATION YIELD OF HIGH-ENERGY ELECTRONS IN THICK CRYSTALS
    BAIER, VN
    KATKOV, VM
    STRAKHOVENKO, VM
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 133 (02): : 583 - 592
  • [2] CASCADE PROCESSES IN RADIATION BY HIGH-ENERGY ELECTRONS IN CRYSTALS - THE RADIATION PEAK
    KONONETS, YV
    RYABOV, VA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 269 - 273
  • [3] Radiation from polarized electrons in oriented crystals at high energy
    Baier, VN
    Katkov, VM
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 234 (1-2): : 106 - 115
  • [4] SCATTERING PROCESSES OF HIGH-ENERGY ELECTRONS IN CRYSTAL-SURFACES
    WANG, ZL
    [J]. MICRON AND MICROSCOPICA ACTA, 1988, 19 (04): : 201 - 207
  • [5] SEPARATION OF HIGH-ENERGY ELECTRONS AND HADRONS WITH THE HELP OF ORIENTED TUNGSTEN CRYSTALS
    BASKOV, VA
    GOVORKOV, BB
    KIM, VV
    SERGIENKO, VI
    KHABLO, VA
    YUMATOV, VI
    LUCHKOV, BI
    TUGAENKO, VY
    [J]. JETP LETTERS, 1992, 56 (05) : 227 - 230
  • [6] RADIATION OF ACCELERATED ELECTRONS IN ORIENTED CRYSTALS OF GREAT THICKNESS
    BAZYLEV, VA
    GOLOVIZNIN, VV
    [J]. DOKLADY AKADEMII NAUK SSSR, 1989, 304 (02): : 336 - 340
  • [7] SCATTERING OF HIGH-ENERGY ELECTRONS FROM ORIENTED NUCLEI IN EIKONAL APPROXIMATION
    SARKAR, S
    KHATUN, S
    [J]. JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1974, 7 (18): : 2304 - 2317
  • [8] SCATTERING OF HIGH-ENERGY ELECTRONS AND POSITRONS BY ELECTRONS
    ABRIKOSOV, AA
    [J]. SOVIET PHYSICS JETP-USSR, 1956, 3 (03): : 379 - 384
  • [9] ROLE OF ANGULAR-MOMENTUM IN MULTIPLE-SCATTERING AND RADIATION PROCESSES FOR HIGH-ENERGY ELECTRONS IN CRYSTALS
    RYABOV, VA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 183 - 185
  • [10] ON THE RADIATION THEORY OF HIGH-ENERGY ELECTRONS IN ALIGNED SINGLE-CRYSTALS
    BAIER, VN
    KATKOV, VM
    STRAKHOVENKO, VM
    [J]. PHYSICS LETTERS A, 1986, 117 (05) : 251 - 256
12345