共 50 条
- [1] THE EFFECT OF IMPLANT SPECIES ON DEFECT ANNEAL KINETICS .2. ARSENIC AND GERMANIUM IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 499 - 502
- [2] KINETICS OF DEFECT FORMATION IN SILICON DURING IMPLANTATION OF PHOSPHORUS IONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (04): : 477 - 478
- [4] ATHERMAL ROLE OF THE DOSE-RATE IN THE KINETICS OF DEFECT FORMATION AS A RESULT OF IMPLANTATION OF PHOSPHORUS IONS IN SILICON [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (11): : 1306 - 1307
- [5] Effect of implant energy on silicon defect evolution [J]. DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 283 - 289
- [7] EFFECT OF CHLORINE IMPLANTATION ON PHOSPHORUS PREDEPOSITION IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : 533 - 539
- [8] Effect of implantation damage on transient loss of phosphorus in silicon [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 313 : 1 - 4
- [10] DEFECT PRODUCTION AND ANNEALING DUE TO HIGH-ENERGY ION-IMPLANTATION .1. SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 51 (03): : 242 - 246