SURFACE PHOTOVOLTAGE SPECTROSCOPY RESEARCH OF SOLAR SILICON RECOMBINATION PARAMETERS

Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etched (real) surface, structures with the implanted recombination-active Fe+ impurity, SiO2-Si structures with the surface-induced inversion channel, and structures with the diffused p-n junction. A comparison with the formulas obtained for the spectra of direct, V-SC, and inverse, 1/V-SC, photovoltages in terms of the absorption coefficient k and its reciprocal quantity 1/k is carried out. The surface and bulk recombination rates and the distributions of recombination-active impurities, structural technological impurities, and defects in the near-surface charge region of solar silicon are calculated.