A NONLINEAR CIRCUIT MODEL FOR STUDYING THE FREQUENCY-RESPONSE IN BURIED HETEROSTRUCTURE LASERS

An equivalent-circuit model of a semiconductor laser is developed. The model includes diffusion and uses the parabolic gain approximation. It can be applied to various buried heterostructure (BH) devices to simulate optical response characteristics. The values of the circuit elements versus injection current clearly indicate that the parabolic gain approximation and carrier diffusion play an important role in obtaining a more accurate frequency response, especially for (BH) lasers with stripe widths greater than the diffusion length.