ELECTRICAL-RESISTIVITY OF A DISORDERED PD-SI ALLOY

被引：0

作者：

KOPCANSKY, P

ZENTKOVA, A

机构：

来源：

ACTA PHYSICA SLOVACA | 1981年 / 31卷 / 2-3期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：187 / 188

页数：2

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[1] TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY OF AMORPHOUS PD-SI ALLOY
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[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1983, 33 (02) : 243 - 246
[2] ANNEALING EFFECT ON THE ELECTRICAL-RESISTIVITY OF PD-SI BASED ALLOYS
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[3] THE ELECTRICAL-RESISTIVITY OF THIN PD FILMS GROWN ON SI(111)
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[4] ELECTRICAL-RESISTIVITY OF DISORDERED CRYSTALLINE ALLOYS
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[5] ELECTRICAL-RESISTIVITY IN DISORDERED, POLYCRYSTALLINE FENITE ALLOYS
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[6] CPA TREATMENT OF ELECTRICAL-RESISTIVITY OF DISORDERED ALLOYS
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[7] ELECTRICAL-RESISTIVITY OF THE CLB ALLOY CUMNSB
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[8] PARTIAL STRUCTURES IN AMORPHOUS PD-SI ALLOY
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 467 - 467
[9] ELECTRICAL-RESISTIVITY DUE TO DISSOLVED H IN PD
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[10] DYNAMICAL SUSCEPTIBILITY AND ELECTRICAL-RESISTIVITY OF DISORDERED SPIN SYSTEMS
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