Growth and Characterization of CuO-doped SnO2 Thin Films Prepared by Sequential Electron Beam Evaporation Method for Application as Hydrogen Sulfide Gas Sensor

This paper deals with the preparation and characterization of CuO-SnO2 thin films prepared by sequential electron beam evaporation technique. The results obtained were outstanding in terms of sensitivity of these films towards detection of hydrogen sulfide gas, proving that CuO is a good promoter of hydrogen gas sensitivity of SnO2. The resistance of the thin films showed a decreasing trend indicating rupture of pn junctions while the I-V characteristics of these films were linear in nature showing that the contacts are ohmic. The best sensitivity values were obtained for film temperature of 160 degrees C. These films hold promise for use in industrial sector where the hydrogen sulfide gas is widely used.