THEORETICAL FORMALISM TO UNDERSTAND THE ROLE OF STRAIN IN THE TAILORING OF HOLE MASSES IN P-TYPE INXGA1-XAS (ON GAAS SUBSTRATES) AND IN0.53+XGA0.47-XAS (ON INP SUBSTRATES) MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：18
|
作者：
JAFFE, M
SEKIGUCHI, Y
SINGH, J
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来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期
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D O I：
10.1063/1.98308
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1943 / 1945
页数：3
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