LOW-TEMPERATURE, HIGH-STRENGTH, WAFER-TO-WAFER BONDING

被引：6
|
作者：
FLEMING, JG
ROHERTYOSMUN, E
GODSHALL, NA
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 11期
关键词：
D O I：
10.1149/1.2069071
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
High strength bonds can be formed between portions of silicon wafer coated with reflowed BPSG at temperatures as low as 160-degrees-C. Both a novel modified cantilever beam analysis, and crude physical methods attest to the strength of the bonds formed. Strong bonds between thermal oxides also have been observed, indicating that neither boron nor phosphorous are essential to the process. Preparation cleanliness may be the key to low temperature, high strength bonding. Recent work in the glass sol-gel area supports the hypothesis that this process is the result of a low temperature condensation reaction.
引用
收藏
页码：3300 / 3302
页数：3
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