THE KONDO EFFECT TO NONLINEAR TRANSPORT THROUGH A QUANTUM-DOT

被引：4
|
作者：
YAMAGUCHI, F
YAMAGA, M
KAWAMURA, K
机构：
[1] Department of Physics, Faculty of Science and Technology, Keio University, Yokohama
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷
关键词：
D O I：
10.1016/0304-8853(94)00581-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Kondo effect is possibly observed in electronic transport through quantum dots in semiconducting devices. Current and its fluctuation depend logarithmically on bias voltage when voltage is higher than the Kondo temperature. At low voltage regime, the dependence is regular. In both the cases, voltage is scaled by the Kondo temperature.
引用
收藏
页码：1207 / 1208
页数：2
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