ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE

被引：47

作者：

BARAFF, GA ^{[1
]}

APPELBAUM, JA ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：999 / 1005

页数：7

共 50 条

[1] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
BARAFF, GA
APPELBAUM, JA
HAMANN, DR
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 293 - 293
[2] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
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APPELBAUM, JA
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[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240
[3] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503
[4] ABRUPT AVALANCHE BREAKDOWN IN GAAS-GE HETEROJUNCTIONS
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[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (06) : 807 - 808
[5] AUTODOPING EFFECTS AT INTERFACE OF GAAS-GE HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1498 - 1500
[7] ELECTRONIC-STRUCTURE OF MOLTON SI, GE, AND GAAS
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[8] ELECTRONIC-STRUCTURE OF THE FE/GE(110) INTERFACE
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[J]. PHYSICAL REVIEW B, 1986, 34 (12): : 8372 - 8378
[9] ELECTRONIC-STRUCTURE OF THE YB/GE(111) INTERFACE
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[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 864 - 872
[10] EARLY STAGES OF GAAS-GE(110) INTERFACE FORMATION
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