NOISE MODELING IN SUBMICROMETER-GATE FETS

被引：31
|
作者：
CARNEZ, B
CAPPY, A
FAUQUEMBERGUE, R
CONSTANT, E
SALMER, G
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 07期
关键词：
D O I：
10.1109/T-ED.1981.20431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：784 / 789
页数：6
相关论文
共 50 条
  • [1] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS
    CAPPY, A
    CARNEZ, B
    FAUQUEMBERGUES, R
    SALMER, G
    CONSTANT, E
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160
  • [2] NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS
    CAPPY, A
    VANOVERSCHELDE, A
    SCHORTGEN, M
    VERSNAEYEN, C
    SALMER, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2787 - 2796
  • [3] SUBMICROMETER-GATE CMOS-SOS LOGIC
    MAYER, DC
    PERKINS, WE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C341 - C341
  • [4] Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs
    Jazaeri, Farzan
    Sallese, Jean-Michel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (08) : 2593 - 2597
  • [5] ANALYSIS OF THE SWITCHING SPEED OF A SUBMICROMETER-GATE CMOS-SOS INVERTER
    MAYER, DC
    PERKINS, WE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 886 - 888
  • [6] Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs
    Matsudaira, H
    Miyamoto, S
    Ishizaka, H
    Umezawa, H
    Kawarada, H
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) : 480 - 482
  • [7] ACCURATE MODELING FOR SUBMICROMETER-GATE SI AND GAAS-MESFETS USING TWO-DIMENSIONAL PARTICLE SIMULATION
    YOSHII, A
    TOMIZAWA, M
    YOKOYAMA, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1376 - 1380
  • [8] Noise Modeling issues of nanoscale multi-gate FETs
    Spathis, C.
    Georgakopoulou, K.
    Birbas, Alexios
    2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2013,
  • [9] ULTRAHIGH-FREQUENCY PERFORMANCE OF SUBMICROMETER-GATE ION-IMPLANTED GAAS-MESFETS
    WANG, GW
    FENG, M
    LAU, CL
    ITO, C
    LEPKOWSKI, TR
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 206 - 208
  • [10] INDUCED GATE NOISE IN MOS FETS
    KIRK, EW
    VANDERZI.A
    CHENETTE, ER
    KIM, CS
    SOLID-STATE ELECTRONICS, 1971, 14 (10) : 945 - &
12345