ANALYSIS OF HETEROJUNCTION BIPOLAR-TRANSISTOR RESONANT TUNNELING DIODE LOGIC FOR LOW-POWER AND HIGH-SPEED DIGITAL APPLICATIONS

被引：36
|
作者：
CHANG, CE
ASBECK, PM
WANG, KC
BROWN, ER
机构：
[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 04期
关键词：
15;
D O I：
10.1109/16.202778
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new high-speed digital logic family based on heterojunction bipolar transistors (HBT's) and resonant tunneling diodes (RTD's) is proposed. The negative differential resistance of RTD's is used to significantly decrease the static power dissipation. SPICE simulations indicate that propagation delay time below 150 ps at 0.09-mW static power per gate should be obtainable.
引用
收藏
页码：685 / 691
页数：7
相关论文
共 50 条
  • [1] High-speed and low-power operation of a resonant tunneling logic gate MOBILE
    Maezawa, K
    Matsuzaki, H
    Yamamoto, M
    Otsuji, T
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) : 80 - 82
  • [2] HETEROJUNCTION BIPOLAR-TRANSISTOR DESIGN FOR POWER APPLICATIONS
    GAO, GB
    MORKOC, H
    CHANG, MCF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 1987 - 1997
  • [3] AN (ALGA)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A RESONANT-TUNNELING COLLECTOR
    SHIGEKAWA, N
    BETON, PH
    BUHMANN, H
    EAVES, L
    HENINI, M
    JOHNSTON, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) : 1500 - 1503
  • [4] Heterojunction tunnel field-effect transistor suitable for high-speed low-power applications
    Chinnala Pavan Kumar
    K. Sivani
    Applied Nanoscience, 2023, 13 : 2481 - 2488
  • [5] Heterojunction tunnel field-effect transistor suitable for high-speed low-power applications
    Kumar, Chinnala Pavan
    Sivani, K.
    APPLIED NANOSCIENCE, 2022, 13 (3) : 2481 - 2488
  • [6] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE
    CHANG, MF
    ASBECK, PM
    WANG, KC
    SULLIVAN, GJ
    MILLER, DL
    ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174
  • [7] BICMOS NONTHRESHOLD LOGIC FOR HIGH-SPEED LOW-POWER APPLICATIONS
    BELLAOUAR, A
    ELMASRY, MI
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (08) : 1165 - 1167
  • [8] GAAS MOSFET FOR LOW-POWER HIGH-SPEED LOGIC APPLICATIONS
    MIMURA, T
    YOKOYAMA, N
    KUSAKAWA, H
    SUYAMA, K
    FUKUTA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1828 - 1828
  • [9] Resonant tunneling heterojunction bipolar tub transistors and their applications in high functionality/speed digital circuits
    Haddad, GI
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 129 - 132
  • [10] THE HETEROJUNCTION BIPOLAR-TRANSISTOR - AN ESTIMATE OF ITS POTENTIAL FOR DIGITAL APPLICATIONS
    HALL, S
    ECCLESTON, W
    JOURNAL OF THE INSTITUTION OF ELECTRONIC AND RADIO ENGINEERS, 1987, 57 (01): : S29 - S34
12345