OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON

被引：32

|

作者：

CHEN, MC

HILE, JW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 02期

关键词：

D O I：

10.1149/1.2404165

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：223 / +

页数：1

相关论文

共 50 条

[1] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION
HATTORI, T
APPLIED PHYSICS LETTERS, 1977, 30 (07) : 312 - 314
[2] Behavior of metal-induced oxide charge during thermal oxidation in silicon wafers
Shimizu, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (12) : 4335 - 4340
[3] THERMAL-OXIDATION OF SILICON USING TRICHLOROETHYLENE
CLARK, RS
SOLID STATE TECHNOLOGY, 1978, 21 (11) : 80 - 82
[4] Silicon oxide decomposition and desorption during the thermal oxidation of silicon
Starodub, D
Gusev, EP
Garfunkel, E
Gustafsson, T
SURFACE REVIEW AND LETTERS, 1999, 6 (01) : 45 - 52
[5] KINETICS OF OXIDE GROWTH DURING THERMAL OXIDATION OF SILICON
LAVERTY, SJ
RYAN, WD
INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 26 (06) : 519 - &
[6] Mechanism of oxide deformation during silicon thermal oxidation
Kageshima, H
Uematsu, M
Akagi, K
Tsuneyuki, S
Akiyama, T
Shiraishi, K
PHYSICA B-CONDENSED MATTER, 2006, 376 : 407 - 410
[7] SILICON OXIDATION AND FIXED OXIDE CHARGE
WOLTERS, DR
ZEGERSVANDUIJNHOVEN, ATA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (01) : 241 - 249
[8] THERMAL-OXIDATION OF SILICON IN O2-TRICHLOROETHYLENE
SINGH, BR
BALK, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1288 - 1294
[9] Dislocation Density Reduction During Impurity Gettering in Multicrystalline Silicon
Choi, H. J.
Bertoni, M. I.
Hofstetter, J.
Fenning, D. P.
Powell, D. M.
Castellanos, S.
Buonassisi, T.
IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01): : 189 - 198
[10] Dislocation density reduction during impurity gettering in multicrystalline silicon
Choi, H.J. (hyunjoo@mit.edu), 1600, IEEE Electron Devices Society (03):

← 1 2 3 4 5 →