OXYGEN-ADSORPTION ON THE SURFACE OF CDSE(X)TE (1-X) THIN-FILMS

被引：6
|
作者：
SEBASTIAN, PJ
SIVARAMAKRISHNAN, V
机构：
[1] Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Madras
来源：
VACUUM | 1990年 / 41卷 / 1-3期
关键词：
D O I：
10.1016/0042-207X(90)90443-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reported here are the results of oxygen adsorption studies on the surface of CdSe(x)Te(1 - x) thin films, where 0 ≤ x ≤ 1. The films when exposed to oxygen at 1 torr and atmosphere, at 300 K showed instability in film resistance depending on the amount of CdSe present in the compound. An increase in CdSe% resulted in more increase in resistance of the films with time (ageing). The observed ageing is explained by an oxygen adsorption model. The results were supported by X-ray Photoelectron Spectroscopy (XPS) of the films. © 1990 Pergamon Press plc.
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收藏
页码：647 / 649
页数：3
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