ELECTRICALLY ALTERABLE READ ONLY MEMORY (EAROM) BASED ON A FLOATING GATE MOS-TRANSISTOR EMPLOYING INJECTOR LAYERS OF SI-RICH SI3N4

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作者：
NEDEV, NR
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来源：
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE | 1987年 / 40卷 / 07期
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O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
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页码：55 / 58
页数：4
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