SPECTROSCOPIC INVESTIGATION OF ENERGY-TRANSFER REACTIONS IN BCL3/N2 DISCHARGES

被引:10
|
作者
BREITBARTH, FW
机构
[1] Institute of Physical Chemistry, Friedrich-Schiller-University, Jena, D-O-6900
关键词
NITROGEN PLASMA; BCL3; DISSOCIATION; EMISSION SPECTROSCOPY; ENERGY TRANSFER;
D O I
10.1007/BF01447025
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
In weakly excited low-pressure BCl3/N2 discharges, the emission intensity of the first positive N2 system decreases steeply with increasing BCl3 molar fraction, while the emissions of BCl and atomic boron exhibit narrow maxima at BCl3 molar fractions of 1 and 0.4%, respectively. From the molar fraction dependence of the electron density and of the N2 second positive emission, it is concluded that electron impact excitation is not responsible for the observed BCl and B emissions. An energy transfer from the N2(W) state to BCl(x) species can explain the results.
引用
收藏
页码:261 / 274
页数:14
相关论文
共 50 条
  • [1] EMISSIONSPECTROSCOPIC INVESTIGATION OF BCL3 DISCHARGES
    BREITBARTH, FW
    DUCKE, E
    CONTRIBUTIONS TO PLASMA PHYSICS, 1990, 30 (05) : 691 - 701
  • [2] Characterization of BCl3/N2 plasmas
    Nordheden, KJ
    Sia, JF
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2199 - 2202
  • [3] Characterization of BCl3/N2 plasmas
    Nordheden, K.J. (nordhed@ku.edu), 1600, American Institute of Physics Inc. (94):
  • [4] Reactive ion etching of GaN using BCl3, BCl3/Ar and BCl3/N2 gas plasmas
    Basak, D
    Nakanishi, T
    Sakai, S
    SOLID-STATE ELECTRONICS, 2000, 44 (04) : 725 - 728
  • [5] SPECTRA AND ENERGY-TRANSFER IN SOLID N2
    DRESSLER, K
    CHIMIA, 1981, 35 (07) : 255 - 256
  • [6] BCl3/N2 dry etching of InP, InAlP, and InGaP
    J Vac Sci Technol B, 3 (1758):
  • [7] ENERGY-TRANSFER REACTIONS OF N2(A3-SIGMAU+) TO SO AND OTHER DIATOMIC AND POLYATOMIC-MOLECULES
    DE, ZC
    SETSER, DW
    JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (05): : 1169 - 1178
  • [8] BCl3/N2 plasma for advanced non-Si gate patterning
    Shamiryan, Denis
    Paraschiv, Vasile
    Eslava-Fernandez, Salvador
    Demand, Marc
    Baklanov, Mikhail
    Boullart, Werner
    TRANSISTOR SCALING- METHODS, MATERIALS AND MODELING, 2006, 913 : 105 - +
  • [9] Photo-assisted RIE of GaN in BCl3/Cl2/N2
    Medelci, N
    Tempez, A
    Berishev, I
    Starikov, D
    Bensaoula, A
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 535 - 540
  • [10] The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry
    Koo, SM
    Kim, DP
    Kim, KT
    Kim, CI
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 201 - 204