ALGAAS/GAAS MQW LASER DIODE FABRICATED ON SI SUBSTRATES BY MOCVD

被引：5
|
作者：
SHIRAISHI, H
YAMADA, R
MATSUI, N
UMENO, M
机构：
[1] Nagoya Inst of Technology, Nagoya, Jpn, Nagoya Inst of Technology, Nagoya, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 03期
关键词：
LASER DIODES - METALLORGANIC CHEMICAL VAPOR DEPOSITION - MULTI-QUANTUM-WELL DEVICES - PEAK WAVELENGTH - THRESHOLD CURRENT;
D O I：
10.1143/JJAP.26.L198
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L198 / L199
页数：2
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