STRUCTURE OF SUBMONOLAYERS OF TIN ON SI(111) STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：42
|
作者：
NOGAMI, J
PARK, SI
QUATE, CF
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词：
D O I：
10.1116/1.576029
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
下载
收藏
页码：1919 / 1921
页数：3
相关论文
共 50 条
  • [1] The atomic structure of Pt on Si(111) studied by scanning tunneling microscopy
    Gao, Min
    Pan, Yi
    Xu, Wenyan
    Huang, Li
    Wang, Yeliang
    Lin, Yuan
    Gao, H. -J.
    APPLIED SURFACE SCIENCE, 2014, 314 : 841 - 844
  • [2] Adsorption and reaction of NO on Si(111) studied by scanning tunneling microscopy
    Rottger, B
    Kliese, R
    Neddermeyer, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 1051 - 1054
  • [3] Thallium overlayers on Si(111) studied by scanning tunneling microscopy
    Kotlyar, VG
    Saranin, AA
    Zotov, AV
    Kasyanova, TV
    SURFACE SCIENCE, 2003, 543 (1-3) : L663 - L667
  • [4] Adsorption and reaction of NO on Si(111) studied by scanning tunneling microscopy
    Rottger, B.
    Kliese, R.
    Neddermeyer, H.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1996, 14 (02):
  • [5] Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy
    vanWingerden, J
    vanDam, A
    Haye, MJ
    Scholte, PMLO
    Tuinstra, F
    PHYSICAL REVIEW B, 1997, 55 (07): : 4723 - 4730
  • [6] STRUCTURE OF THE AU/SI(111) SURFACE BY SCANNING TUNNELING MICROSCOPY
    DUMAS, P
    HUMBERT, A
    MATHIEU, G
    MATHIEZ, P
    MOUTTET, C
    ROLLAND, R
    SALVAN, F
    THIBAUDAU, F
    TOSCH, S
    PHYSICA SCRIPTA, 1988, 38 (02): : 244 - 245
  • [7] STRUCTURE OF THE AG/SI(111) SURFACE BY SCANNING TUNNELING MICROSCOPY
    WILSON, RJ
    CHIANG, S
    PHYSICAL REVIEW LETTERS, 1987, 58 (04) : 369 - 372
  • [8] The Y-Si(111) interface formation studied by scanning tunneling microscopy
    Polop, C
    Sacedón, JL
    Martín-Gago, JA
    SURFACE SCIENCE, 2000, 454 : 842 - 846
  • [9] Cu film growth on a Si(111) surface studied by scanning tunneling microscopy
    Tomimatsu, S
    Hasegawa, T
    Kohno, M
    Hosoki, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (6B): : 3730 - 3733
  • [10] Cu film growth on a Si(111) surface studied by scanning tunneling microscopy
    Tomimatsu, Satoshi
    Hasegawa, Tsuyoshi
    Kohno, Makiko
    Hosoki, Shigeyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (6 B): : 3730 - 3733
12345