NEUTRON IRRADIATED SEMICONDUCTORS

被引：32

作者：

JOHNSON, WE

LARKHOROVITZ, K

机构：

来源：

PHYSICAL REVIEW | 1949年 / 76卷 / 03期

关键词：

D O I：

10.1103/PhysRev.76.442

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：442 / 443

页数：2

共 50 条

[1] THERMAL EQUILIBRIUM IN NEUTRON-IRRADIATED SEMICONDUCTORS
CRAWFORD, JH
LARKHOROVITZ, K
PHYSICAL REVIEW, 1950, 79 (05): : 889 - 890
[2] PARAMAGNETIC CENTERS IN NEUTRON-IRRADIATED GLASSY SEMICONDUCTORS
DURNY, R
MACKO, P
MACKOVA, V
SOLID STATE COMMUNICATIONS, 1979, 31 (03) : 173 - 174
[3] DEEP LEVEL TRANSIENT SPECTROSCOPY OF NEUTRON-IRRADIATED SEMICONDUCTORS
FARMER, JW
MEESE, JM
JOURNAL OF NUCLEAR MATERIALS, 1982, 108 (1-2) : 700 - 708
[4] THEORY OF ANOMALOUS INFRARED ATTENUATION IN NEUTRON-IRRADIATED COMPOUND SEMICONDUCTORS
MCNICHOLS, JL
GINELL, WS
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 656 - +
[5] CONDUCTIVITY OF IRRADIATED SEMICONDUCTORS
SHIK, AY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1030 - 1034
[6] ELECTROPHYSICAL PROPERTIES OF NEUTRON-IRRADIATED NARROW-BAND SEMICONDUCTORS HG1-XCDXTE
VOITSEKHOVSKII, AV
VOLOSHIN, OV
GOLMAN, MB
KOKHANENKO, AP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (08): : 118 - 121
[7] NEUTRON IRRADIATED SILICON
LONGO, TA
KLEITMAN, D
PHYSICAL REVIEW, 1955, 100 (04): : 1260 - 1260
[8] Displacement damage in irradiated metals and semiconductors
Averback, RS
de la Rubia, TD
SOLID STATE PHYSICS, VOL 51: ADVANCES IN RESEARCH AND APPLICATIONS, 1998, 51 : 281 - 402
[9] Reductive and oxidative processes at irradiated semiconductors
Pelizzetti, E
Calza, P
Minero, C
Vincenti, M
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1996, 211 : 264 - PHYS
[10] IRRADIATED SILICON MAKES FOR POPULAR SEMICONDUCTORS
不详
ELECTRICAL REVIEW, 1976, 198 (11): : 53 - 53

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