A SIMPLE ANALYSIS OF THE ELECTRONIC CONTRIBUTION TO THE ELASTIC-CONSTANTS IN STRESSED KANE TYPE SEMICONDUCTORS

In this paper an attempt is made to study the electronic contribution to the second and third order elastic constants in stressed Kane type semiconductors by formulating the respective expressions. It is found, for stressed n-InSb, that they increase with increasing carrier concentration in different manners, since the variations are totally band structure dependent and the stress enhances the numerical values of the elastic constants. We have also suggested an experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws. In addition, the well-known results for non-degenerate parabolic semiconductors have been obtained from the generalized expressions under certain limiting conditions.