TIME OF FLIGHT OF ELECTRONS AND HOLES AT 77-K AND 300-K IN GAAS ALAS SUPERLATTICES

被引：5
|
作者：
LEPERSON, H [1 ]
PALMIER, JF [1 ]
MINOT, C [1 ]
ESNAULT, JC [1 ]
MOLLOT, F [1 ]
机构：
[1] CNRS,L2M,F-92220 BAGNEUX,FRANCE
来源：
SURFACE SCIENCE | 1990年 / 228卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90347-B
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The carrier drift velocity versus applied electric field in GaAs/AlAs superlattices is directly determined from a photocurrent time of flight technique. The electron negative differential velocity regime is clearly evidenced and in good agreement with static current-voltage data in the case of a relatively thick barrier superlattice (7 AlAs layers). For a thinner barrier superlattice (4 AlAs layers) the low field electron mobility seems temperature dependent, and also a drastic hole mobility decrease is observed at low temperature and interpreted in terms of light hole freeze out. © 1990.
引用
收藏
页码：441 / 445
页数：5
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