DEVELOPMENT OF SCANNING TUNNELING AND ATOMIC-FORCE MICROSCOPY

The author surveys recent advances in scanning tunneling and atomic-force microscopy and describes methods based on nonlinear effects in tunneling and on the ballistic escape of electrons through a thin metal layer applied to the specimen surface. Experiments in which transverse cleavage surfaces of multilayer semiconductor structures and dislocations are observed with atomic resolution and experiments in surface chemistry are described. The material supplements an earlier review [1].