共 50 条
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- [4] CARRIER TRANSPORT IN STRIPE-GEOMETRY GA1-XALXAS DOUBLE HETEROSTRUCTURE DIODE-LASERS AND BROAD AREA HETEROJUNCTIONS[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1981 - 1987ZEMEL, AWILLEMSEN, HWANDERSON, KDSHEPHERD, FR
- [5] TRANSVERSE-MODE STABILIZED GAALAS DH LASERS[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1981, 17 (01): : 87 - 100HANAMITSU, KFUJIWARA, TTAKUSAGAWA, M
- [6] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1674 - 1674BURNHAM, RDSCIFRES, DRSTREIFER, W
- [7] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230BURNHAM, RDSCIFRES, DRSTREIFER, W
- [8] RELIABILITY OF GA1-XALXAS INJECTION-LASERS[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 437 - 437GOODWIN, ARHENSHALL, GDSELWAY, PROHARA, SNEWMAN, DDOBSON, P
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- [10] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131GOODWIN, ARPETERS, JRPION, MTHOMPSON, GHBWHITEAWAY, JEA