EFFECT OF THERMAL PRETREATMENT ON ELECTRON-IRRADIATION INDUCED DEFECTS IN HYDROGEN-GROWN SILICON

被引：4
|
作者：
WU, J
QIN, GG
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期
关键词：
D O I：
10.1063/1.97854
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1355 / 1357
页数：3
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