PUNCH-THROUGH CURRENTS AND FLOATING STRIP POTENTIALS IN SILICON DETECTORS

被引：37
|
作者：
ELLISON, J [1 ]
HALL, G [1 ]
ROE, S [1 ]
WHEADON, R [1 ]
AVSET, BS [1 ]
EVENSEN, L [1 ]
机构：
[1] CTR INDUSTRIFORSKNING,OSLO 3,NORWAY
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 01期
关键词：
D O I：
10.1109/23.34447
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：267 / 271
页数：5
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