STUDY OF THE LATERAL ISLAND EXTENSION FOR GROWTH-INTERRUPTED GAAS/AL0.3GA0.7AS SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We have investigated by means of temperature-dependent photoluminescence (PL) measurement, the lateral island extension at heterointerfaces during the growth interruption (0-120 s) for GaAS/Al0.3Ga0.7As single quantum wells (SQW) grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD). We have shown lateral island extension for the interrupted SQW by using Gaussian-deconvolution of the PL lineshape. In addition, we have found a thermalization effect, implying that the size of the lateral islands are larger than the 2-dimensional excitonic diameter in SQW. However, due to the fast island extension, the impurity bulid up at the heterointerfaces, and the additional growth due to the dead volume in the reactor, very narrow interruption-time windows were present and achieved atomically flat GaAs/AlGaAs hetero-interfaces.