PARAMETER EXTRACTION FOR A NEW ANALYTICAL MODEL OF THE SHORT-CHANNEL MOS TRANSISTOR

被引：0
|
作者：
Sevcenco, Andrei [1 ]
Boianceanu, Cristian [1 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
来源：
UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES C-ELECTRICAL ENGINEERING AND COMPUTER SCIENCE | 2014年 / 76卷 / 02期
关键词：
analytical modeling; parameter extraction; short-channel effects; MOS transistor; fitting algorithm;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extraction method for the parameters of a new analytical model of the submicron MOS transistor for analog applications is presented. The stages which form the extraction process are detailed, along with an original parameter extractor created in Labview, which uses the Levenberg-Marquardt fitting algorithm. Also presented are the results of the fitting of the model to experimental curves obtained with measured data taken from real MOS transistors, as well as to theoretical curves generated with the EKV model.
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页码：131 / 144
页数：14
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