27 dBm Microwave Amplifiers with Adaptive Matching Networks

被引：1

作者：

Rosolowski, Dawid ^{[1
]}

Wojtasiak, Wojciech ^{[1
]}

Gryglewski, Daniel ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Radioelect, Nowowiejska 15-19, PL-00665 Warsaw, Poland

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS | 2011年 / 57卷 / 01期

关键词：

Adaptive Power Amplifiers (APAs); components for Software Defined Radio; multi-band & multi-mode devices; RF adaptivity; tunable matching networks;

D O I：

10.2478/v10177-011-0015-x

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.

引用

页码：103 / 108

页数：6

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