ENERGY-LEVELS AND DEFECT SIGNATURE OF SULFUR-IMPLANTED SILICON BY THERMALLY STIMULATED MEASUREMENTS

被引：15
|
作者：
KOYAMA, RY [1 ]
PHILLIPS, WE [1 ]
MYERS, DR [1 ]
LIU, YM [1 ]
DIETRICH, HB [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 07期
关键词：
D O I：
10.1016/0038-1101(78)90293-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：953 / 955
页数：3
相关论文
共 50 条
  • [1] ENERGY-LEVELS OF SULFUR IN SILICON
    MUKHTAROV, AP
    SULAIMONOV, NT
    PULATOVA, DS
    KHAKIMOV, ZM
    SEMICONDUCTORS, 1994, 28 (06) : 587 - 589
  • [2] ENERGY-LEVELS FOR SULFUR IN SILICON
    RABIE, S
    RUMIN, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : C189 - C189
  • [3] Defect characteristics in sulfur-implanted CVD homoepitaxial diamond
    Hasegawa, M
    Ogura, M
    Takeuchi, D
    Yamanaka, S
    Watanabe, H
    Ri, S
    Kobayashi, N
    Okushi, H
    Sekiguchi, T
    BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000, 2000, 78-79 : 171 - 176
  • [4] POSITIONS OF ENERGY-LEVELS OF ION-IMPLANTED IMPURITIES IN SILICON
    ZORIN, EI
    PAVLOV, PV
    TETELBAUM, DI
    KHOKHLOV, AF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1340 - 1341
  • [5] ENERGY-LEVELS IN SILICON
    CHEN, JW
    MILNES, AG
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228
  • [6] ENERGY-DEPENDENCE OF DEFECT ENERGY-LEVELS IN ELECTRON-IRRADIATED SILICON
    KRYNICKI, J
    BOURGOIN, JC
    VASSAL, G
    REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (03): : 481 - 484
  • [7] ENERGY-LEVELS OF A DIVACANCY IN SILICON
    BERMAN, LS
    VORONKOV, VB
    REMENYUK, AD
    TOLSTOBROV, MG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 84 - 86
  • [8] ENERGY-LEVELS OF SELENIUM IN SILICON
    ASTROVA, EV
    BOLSHAKOV, IB
    LEBEDEV, AA
    MIKHNO, OA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (04): : 371 - 373
  • [9] ENERGY-LEVELS OF PALLADIUM IN SILICON
    SO, L
    GHANDHI, SK
    SOLID-STATE ELECTRONICS, 1977, 20 (02) : 113 - 117
  • [10] ENERGY-LEVELS OF SULFUR SENSITIZER CENTERS
    HAMILTON, JF
    HARBISON, JM
    JEANMAIRE, DL
    JOURNAL OF IMAGING SCIENCE, 1988, 32 (01): : 17 - 19
12345