PRESSURE-DEPENDENT STUDIES OF THE DX CENTER IN SI-DOPED AND SN-DOPED N+GAAS

被引：6
|
作者：
PORTAL, JC
MAUDE, DK
FOSTER, TJ
EAVES, L
DMOWSKI, L
NATHAN, M
HEIBLUM, M
HARRIS, JJ
BEALL, RB
SIMMONDS, PE
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND
[3] CNRS,SNCI,F-38042 GRENOBLE,FRANCE
[4] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 01期
关键词：
D O I：
10.1016/0749-6036(88)90263-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：33 / 38
页数：6
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