RECOMBINATION IN SEMICONDUCTORS WITH INTERCRYSTALLINE BARRIERS

被引：0

|

作者：

GOLOVANOV, VV

SMYNTYNA, VA

CHEMERESYUK, GG

SHMILEVICH, AM

机构：

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1989年 / 32卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：56 / 60

页数：5

相关论文

共 50 条

[1] KINETICS OF THE DRIFT BARRIER IN SEMICONDUCTORS WITH RECOMBINATION BARRIERS
RUDYAK, VM
ZHAROV, SN
NEKRASOV, AV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1980, (06): : 102 - 104
[2] DENSITY DETERMINATION OF HEIGHT DISTRIBUTION OF INTERCRYSTALLINE BARRIERS BY THE FREQUENCY DISPERSION OF THE ELECTROCONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS
VINNIKOV, AY
MESHKOV, AM
SAVUSHKIN, VN
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (12): : 709 - 712
[3] RECOMBINATION-TRAP BARRIERS IN WIDE-GAP SEMICONDUCTORS
STAFEEV, VI
ELTSOV, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 549 - 551
[4] RECOMBINATION IN SEMICONDUCTORS
LANDSBERG, PT
NATURE, 1978, 275 (5678) : 270 - 271
[5] RECOMBINATION IN SEMICONDUCTORS
BEMSKI, G
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004
[6] INTERCRYSTALLINE POTENTIAL BARRIERS DUE TO IRREGULARLY DISTRIBUTED TRAPS
BEDNARCZYK, D
BEDNARCZYK, J
WEGRZYN, A
THIN SOLID FILMS, 1976, 36 (01) : 165 - 169
[7] RADIATIVE RECOMBINATION IN SEMICONDUCTORS
不详
INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 18 (04) : 399 - &
[8] Surface recombination in semiconductors
Langer, J.M.
Walukiewicz, W.
Materials Science Forum, 1995, 196-201 (pt 3) : 1389 - 1394
[9] Recombination Superradiance in Semiconductors
Belyanin, A. A.
Kocharovskii, V. V.
Kocharovskii, Vl V.
LASER PHYSICS, 1992, 2 (06) : 952 - 964
[10] RADIATIVE RECOMBINATION IN SEMICONDUCTORS
不详
TRANSACTIONS OF THE FARADAY SOCIETY, 1966, 62 (519P): : 770 - &

← 1 2 3 4 5 →