CHARACTERISTICS OF INALAS/INGAASP QUANTUM-WELL HEMTS

被引:0
|
作者
HONG, WP [1 ]
BHAT, R [1 ]
HAYES, JR [1 ]
CHANG, GK [1 ]
NGUYEN, C [1 ]
KOZA, M [1 ]
机构
[1] BELLCORE,RED BANK,NJ 07701
关键词
D O I
10.1109/16.158720
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:2701 / 2702
页数:2
相关论文
共 50 条
  • [1] HIGH-BREAKDOWN, HIGH-GAIN INALAS INGAASP QUANTUM-WELL HEMTS
    HONG, WP
    BHAT, R
    HAYES, JR
    NGUYEN, C
    KOZA, M
    CHANG, GK
    [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (10) : 559 - 561
  • [2] QUANTUM-WELL INGAASP/INP LASERS
    GOLIKOVA, EG
    DURAEV, VP
    KOZIKOV, SA
    KRIGEL, VG
    LABUTIN, OA
    SHVEIKIN, VI
    [J]. KVANTOVAYA ELEKTRONIKA, 1995, 22 (02): : 105 - 107
  • [3] QUANTUM-WELL DEVICES WILL CHALLENGE HEMTS
    NEIKIRK, DP
    KESAN, V
    [J]. MICROWAVES & RF, 1986, 25 (07) : 93 - &
  • [4] INFLUENCE OF SATURATION OF THE GAIN ON THE THRESHOLD CHARACTERISTICS OF QUANTUM-WELL INGAASP GAAS HETEROLASERS
    GARBUZOV, DZ
    TIKUNOV, AV
    ZHIGULIN, SN
    SOKOLOVA, ZN
    KHALFIN, VB
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 653 - 656
  • [5] Intermixing of InGaAsP/InGaAsP quantum-well structures using dielectric films
    Hazell, JF
    Thompson, DA
    Bertsch, N
    Simmons, JG
    Robinson, RJ
    Sproule, GI
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (12) : 986 - 991
  • [6] AUGER RECOMBINATION IN QUANTUM-WELL INGAASP HETEROSTRUCTURE LASERS
    CHIU, LC
    YARIV, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) : 1406 - 1409
  • [7] BAND OFFSETS IN STRAINED INGAASP/INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES
    MARTIN, RW
    WONG, SL
    NICHOLAS, RJ
    SMITH, A
    GIBBON, MA
    THRUSH, EJ
    STAGG, JP
    [J]. JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 327 - 330
  • [8] NONLINEAR SPECTROSCOPY OF INGAAS/INALAS MULTIPLE QUANTUM-WELL STRUCTURES
    WEINER, JS
    PEARSON, DB
    MILLER, DAB
    CHEMLA, DS
    SIVCO, D
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 531 - 533
  • [9] ELECTRON RELAXATION AND CAPTURE IN INGAASP QUANTUM-WELL LASER STRUCTURES
    MARCINKEVICIUS, S
    OLIN, U
    WALLIN, J
    LANDGREN, G
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3164 - 3166
  • [10] ELECTROABSORPTION STUDIES ON INGAAS/INGAASP QUANTUM-WELL LASER STRUCTURES
    SATZKE, K
    VESTNER, HG
    WEISER, G
    GOLDSTEIN, L
    PERALES, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7703 - 7710