共 50 条
- [1] A LOW-ENERGY LIMIT TO BORON CHANNELING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6369 - 6372
- [2] CRITICAL CHANNELING ANGLES OF LOW-ENERGY IONS IN SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (02): : 117 - 119
- [4] Critical angles and low-energy limits to ion channeling in silicon [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1996, 139 (01): : 21 - 85
- [5] ENERGY-LOSS OF LOW-ENERGY PROTONS CHANNELING IN SILICON-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2): : 113 - 126
- [6] LOW-ENERGY ANTIPROTON CHANNELING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 156 - 158
- [7] BIG CHANNELING EFFECTS AT LOW-ENERGY ION-IMPLANTATION IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02): : K135 - K139
- [8] Comment on "Isotopic mass effects for low-energy channeling in a silicon crystal" [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2011, 166 (11): : 866 - 869
- [9] LOW-ENERGY ELECTRON AND LOW-ENERGY POSITRON HOLOGRAPHY [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (25) : 3654 - 3657
- [10] CHANNELING AND BACKSCATTERING OF LOW-ENERGY IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 30 - 34