WAVELENGTH DEPENDENCE OF THE EMISSION OF A DOUBLE-HETEROJUNCTION GAAS-ALGAAS INJECTION-LASER IN A STRONG MAGNETIC-FIELD

被引：8

作者：

BLUYSSEN, HJA ^{[1
]}

VANRUYVEN, LJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.325961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：8198 / 8200

页数：3

共 32 条

[1] OPERATION OF A DOUBLE HETEROJUNCTION GAAS-ALGAAS INJECTION-LASER WITH A P-TYPE ACTIVE LAYER IN A STRONG MAGNETIC-FIELD
BLUYSSEN, HJA
VANRUYVEN, LJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (11) : 2190 - 2195
[2] A GAAS/ALGAAS DOUBLE-HETEROJUNCTION DEVICE FUNCTIONING AS A BIPOLAR-TRANSISTOR AND INJECTION-LASER FOR OPTOELECTRONIC INTEGRATED-CIRCUITS
HASUMI, Y
KOZEN, A
TEMMYO, J
ASAHI, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 10 - 12
[3] Optical and transport properties of a double heterojunction GaAs/AlGaAs injection laser from the shift of the wavelength and the threshold current in a strong magnetic field
Smetsers, RCGM
van Etteger, AF
Bluyssen, HJA
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) : 121 - 127
[4] TRANSPORT-PROPERTIES IN THE ACTIVE LAYER OF A DOUBLE HETEROSTRUCTURE INJECTION-LASER MEASURED BY A STRONG MAGNETIC-FIELD
BLUYSSEN, HJA
VANETTEGER, A
VANRUYVEN, LJ
[J]. LECTURE NOTES IN PHYSICS, 1983, 177 : 271 - 271
[5] RADIATIVE PROCESSES IN THE ACTIVE LAYER OF AN INJECTION-LASER STUDIED IN A STRONG MAGNETIC-FIELD
BLUYSSEN, HJA
VANRUYVEN, LJ
[J]. JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 885 - 888
[6] SELECTIVELY DOPED DOUBLE-HETEROJUNCTION LATERAL CURRENT INJECTION RIDGE WAVE-GUIDE ALGAAS/GAAS LASER
YASUHIRA, N
SUEMUNE, I
KAN, Y
YAMANISHI, M
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (15) : 1391 - 1393
[7] FIELD-DEPENDENT TRANSPORT OF ELECTRONS IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION SYSTEMS
INOUE, K
SAKAKI, H
YOSHINO, J
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 614 - 616
[8] EFFECT OF STRONG MAGNETIC-FIELD ON EMISSION FROM INJECTION INP LASER
ZVEREV, LP
ISMAILOV, I
NEGASHEV, SA
[J]. KVANTOVAYA ELEKTRONIKA, 1976, 3 (11): : 2511 - 2513
[9] 1/F NOISE IN DOUBLE-HETEROJUNCTION ALGAAS/GAAS LASER-DIODES ON GAAS AND ON SI-SUBSTRATES
FANG, RZ
VANRHEENEN, AD
VANDERZIEL, A
YOUNG, AC
VANDERZIEL, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4087 - 4090
[10] Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor
Kawazu, Takuya
Noda, Takeshi
Sakuma, Yoshiki
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SI)

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