Effects of Gas Velocity on Deposition Rate and Amount of Cluster Incorporation into a-Si:H Films Fabricated by SiH4 Plasma Chemical Vapor Deposition

被引：8

作者：

Kojima, Takashi ^{[1
]}

Toko, Susumu ^{[1
]}

Tanaka, Kazuma ^{[1
]}

Seo, Hyunwoong ^{[1
]}

Itagaki, Naho ^{[1
]}

Koga, Kazunori ^{[1
]}

Shiratani, Masaharu ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka, Fukuoka 8190395, Japan

来源：

PLASMA AND FUSION RESEARCH | 2018年 / 13卷

关键词：

plasma CVD; cluster; a-Si:H; solar cell; laser light scattering; quartz crystal microbalance;

D O I：

10.1585/pfr.13.1406082

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18 m/s, clusters are trapped between the multi-hollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s. (C) 2018 The Japan Society of Plasma Science and Nuclear Fusion Research.

引用

页数：6

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