Electronic properties and introduction kinetics of a metastable radiation induced defect in n-GaAs

The introduction kinetics, electronic properties and electric field assisted emission behaviour of a metastable defect, E alpha 3, induced by alpha-particle irradiation in Si-doped n-GaAs, were investigated by deep level transient spectroscopy (DLTS). We show that E alpha 3 is introduced after irradiation in a first order process during annealing above 280 K. It is metastable and its energy level can be reproducibly removed by hole injection at 90 K - 130 K and re-introduced by annealing above 160 K, respectively. Under low electric field conditions the electronic properties of E alpha 3 are similar, yet dearly discernible from those of the well known radiation induced defect E3. DLTS measurements at different electric fields showed that electron emission from E alpha 3 is much less enhanced by an electric field than emission from E3. We could detect E alpha 3 in Si-doped but not in undoped GaAs.