共 50 条
- [1] THE SI/PD(SI,GE) OHMIC CONTACT ON N-GAAS [J]. APPLIED PHYSICS LETTERS, 1992, 60 (24) : 3016 - 3018
- [4] OHMIC CONTACT FORMATION MECHANISM IN THE GE/PD/N-GAAS SYSTEM [J]. CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 163 - 168
- [6] OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 326 - 327
- [7] On the low resistance Au/Ge/Pd ohmic contact to n-GaAs [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4211 - 4215
- [8] AN IMPROVED AUGE OHMIC CONTACT TO N-GAAS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (10) : 1063 - 1065
- [9] Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs [J]. NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS, 2018, 9 (06): : 789 - 792