INTEGRATED LASER-DIODE VOLTAGE DRIVER FOR 20-GB/S OPTICAL-SYSTEMS USING 0.3-MU-M GATE LENGTH QUANTUM-WELL HEMTS

被引：12
|
作者：
WANG, ZG
BERROTH, M
NOWOTNY, U
LUDWIG, M
HOFMANN, P
HULSMANN, A
KOHLER, K
RAYNOR, B
SCHNEIDER, J
机构：
[1] Fraunhofer-Institute for Applied Solid-State Physics
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1993年 / 28卷 / 07期
关键词：
D O I：
10.1109/4.222183
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum-well high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 mum has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20-OMEGA dynamic resistance. The power consumption is less than 500 mW.
引用
收藏
页码：829 / 834
页数：6
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