The Quality Investigation of 6H-SiC Crystals Grown by a Conventional PVT Method with Various SiC Powders

被引：0

作者：

Yeo, Im-Gyu ^{[1
]}

Lee, Tae-Woo ^{[1
]}

Lee, Won-Jae ^{[1
]}

Shin, Byoung-Chul ^{[1
]}

Choi, Jung-Woo ^{[2
]}

Ku, Kap-Ryeol ^{[2
]}

Kim, Young-Hee ^{[3
]}

机构：

[1] Dong Eui Univ, Elect Ceram Ctr ECC, Dept Nano Technol, Busan 614714, South Korea

[2] Crysband Co Ltd, Busan 614714, South Korea

[3] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2010年 / 11卷 / 02期

关键词：

Sublimation; SiC powder; Growth rate; Crystal quality;

D O I：

10.4313/TEEM.2010.11.2.061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with 0.1-0.2 mu m and 1-10 mu m, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about 10(17) cm(3) were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

引用

页码：61 / 64

页数：4

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